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D44H8G

D44H8G

D44H8G

ON Semiconductor

D44H8G datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

D44H8G Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 8 Weeks
Lifecycle Status ACTIVE (Last Updated: 1 day ago)
Contact Plating Tin
Mounting Type Through Hole
Package / Case TO-220-3
Surface Mount NO
Number of Pins 3
Weight 4.535924g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2004
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Additional Feature LEADFORM OPTIONS ARE AVAILABLE
Subcategory Other Transistors
Voltage - Rated DC 60V
Max Power Dissipation 2W
Peak Reflow Temperature (Cel) 260
Current Rating 10A
Frequency 50MHz
[email protected] Reflow Temperature-Max (s) 40
Base Part Number D44H
Pin Count 3
Number of Elements 1
Element Configuration Single
Power Dissipation 2W
Case Connection COLLECTOR
Transistor Application SWITCHING
Gain Bandwidth Product 50MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 60V
Max Collector Current 10A
DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 4A 1V
Current - Collector Cutoff (Max) 10μA
JEDEC-95 Code TO-220AB
Vce Saturation (Max) @ Ib, Ic 1V @ 400mA, 8A
Collector Emitter Breakdown Voltage 60V
Transition Frequency 50MHz
Collector Emitter Saturation Voltage 1V
Collector Base Voltage (VCBO) 60V
Emitter Base Voltage (VEBO) 5V
hFE Min 40
Max Junction Temperature (Tj) 150°C
Height 19.85mm
Length 10.2616mm
Width 4.826mm
Radiation Hardening No
REACH SVHC No SVHC
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $0.92000 $0.92
50 $0.78400 $39.2
100 $0.64830 $64.83
500 $0.53960 $269.8
1,000 $0.43090 $0.4309
D44H8G Product Details

D44H8G Overview


As the DC current gain is the ratio of the collector current to the base current, for this device the DC current gain is 40 @ 4A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 1V.As a result of vce saturation, Ic reaches its maximum value (saturated), and vce saturation(Max) is 1V @ 400mA, 8A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 10A.As a result, the part has a transition frequency of 50MHz.Single BJT transistor is possible to have a collector current as low as 10A volts at Single BJT transistors maximum.

D44H8G Features


the DC current gain for this device is 40 @ 4A 1V
a collector emitter saturation voltage of 1V
the vce saturation(Max) is 1V @ 400mA, 8A
the emitter base voltage is kept at 5V
the current rating of this device is 10A
a transition frequency of 50MHz

D44H8G Applications


There are a lot of ON Semiconductor D44H8G applications of single BJT transistors.

  • Inverter
  • Interface
  • Muting
  • Driver

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