2SC3303-Y(T6L1,NQ) Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 120 @ 1A 1V.Single BJT transistor offers maximum design flexibilSingle BJT transistory wSingle BJT transistorh a collector emSingle BJT transistorter saturation voltage of 200mV.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 150mA, 3A.An emitter's base voltage can be kept at 7V to gain high efficiency.In extreme cases, the collector current can be as low as 5A volts.

2SC3303-Y(T6L1,NQ) Features

the DC current gain for this device is 120 @ 1A 1V
a collector emitter saturation voltage of 200mV
the vce saturation(Max) is 400mV @ 150mA, 3A
the emitter base voltage is kept at 7V

2SC3303-Y(T6L1,NQ) Applications

There are a lot of Toshiba Semiconductor and Storage 2SC3303-Y(T6L1,NQ) applications of single BJT transistors.

• Driver
• Interface
• Muting
• Inverter