FZT1151ATA Overview

The DC current gain is the ratio of the base current to the collector current βdc = Ic/Ib and the DC current gain for this device is 250 @ 500mA 2V.A collector emitter saturation voltage of -200mV ensures maximum design flexibility.In VCE saturation, Ic is at its maximum value (saturated), and the vce saturation (Max) is 300mV @ 250mA, 3A.Continuous collector voltage should be kept at -3A for high efficiency.The base voltage of the emitter can be kept at 5V to achieve high efficiency.Current rating refers to the maximum current a fuse can carry for an indefinite period without deteriorating substantially, and this device has a -3A current rating.145MHz is present in the transition frequency.As a result, it can handle voltages as low as 40V volts.In extreme cases, the collector current can be as low as 3A volts.

FZT1151ATA Features

the DC current gain for this device is 250 @ 500mA 2V
a collector emitter saturation voltage of -200mV
the vce saturation(Max) is 300mV @ 250mA, 3A
the emitter base voltage is kept at 5V
the current rating of this device is -3A
a transition frequency of 145MHz

FZT1151ATA Applications

There are a lot of Diodes Incorporated FZT1151ATA applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting