2N3716 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N3716 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
12 Weeks
Lifecycle Status
IN PRODUCTION (Last Updated: 2 weeks ago)
Contact Plating
Lead, Tin
Mount
Through Hole
Package / Case
TO-3
Number of Pins
3
Packaging
Bulk
Published
2007
Part Status
Active
Max Operating Temperature
200°C
Min Operating Temperature
-65°C
Max Power Dissipation
5W
Number of Elements
1
Polarity
NPN
Power Dissipation
5W
Collector Emitter Voltage (VCEO)
80V
Max Collector Current
10A
Collector Base Voltage (VCBO)
100V
Emitter Base Voltage (VEBO)
7V
Radiation Hardening
No
RoHS Status
Non-RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$6.93000
$6.93
20
$6.23700
$124.74
40
$5.68250
$227.3
100
$5.12820
$512.82
260
$4.71238
$1225.2188
500
$4.29660
$2148.3
1,000
$3.74220
$3.7422
2,500
$3.69600
$7.392
2N3716 Product Details
2N3716 Overview
Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.When collector current reaches its maximum, it can reach 10A volts.
2N3716 Features
the emitter base voltage is kept at 7V
2N3716 Applications
There are a lot of Microsemi Corporation 2N3716 applications of single BJT transistors.