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2N3716

2N3716

2N3716

Microsemi Corporation

2N3716 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N3716 Datasheet PDF

non-compliant

Technical Specifications

Parameter NameValue
TypeParameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 2 weeks ago)
Contact PlatingLead, Tin
Mount Through Hole
Package / Case TO-3
Number of Pins 3
PackagingBulk
Published 2007
Part StatusActive
Max Operating Temperature200°C
Min Operating Temperature -65°C
Max Power Dissipation5W
Number of Elements 1
Polarity NPN
Power Dissipation5W
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 10A
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 7V
Radiation HardeningNo
RoHS StatusNon-RoHS Compliant
In-Stock:180 items

Pricing & Ordering

QuantityUnit PriceExt. Price
1$6.93000$6.93
20$6.23700$124.74
40$5.68250$227.3
100$5.12820$512.82
260$4.71238$1225.2188
500$4.29660$2148.3

2N3716 Product Details

2N3716 Overview


Single BJT transistor is possible to achieve a high level of efficiency by maintaining the emSingle BJT transistorter base voltage at 7V.When collector current reaches its maximum, it can reach 10A volts.

2N3716 Features


the emitter base voltage is kept at 7V

2N3716 Applications


There are a lot of Microsemi Corporation 2N3716 applications of single BJT transistors.

  • Inverter
  • Muting
  • Interface
  • Driver

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