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2N3879

  • 2N3879
  • 2N3879

2N3879

2N3879

Microsemi Corporation

2N3879 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N3879 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Number of Pins 3
Published 2002
JESD-609 Code e0
Pbfree Code no
Part Status Active
Number of Terminations 2
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory Other Transistors
Max Power Dissipation 35W
Terminal Position BOTTOM
Terminal Form PIN/PEG
Pin Count 2
JESD-30 Code O-MBFM-P2
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Polarity/Channel Type NPN
Collector Emitter Voltage (VCEO) 75V
Max Collector Current 7A
Transition Frequency 40MHz
Collector Base Voltage (VCBO) 120V
DC Current Gain-Min (hFE) 12
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $21.41770 $2141.77
2N3879 Product Details

2N3879 Overview


In this part, there is a transition frequency of 40MHz.Single BJT transistor is possible for the collector current to fall as low as 7A volts at Single BJT transistors maximum.

2N3879 Features


a transition frequency of 40MHz

2N3879 Applications


There are a lot of Microsemi Corporation 2N3879 applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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