TSB772CK B0G Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 100 @ 1A 2V.A VCE saturation indicates a maximum value of Ic (saturation), and a maximum value of VCE saturation (Max).Product comes in TO-126 supplier package.Collector Emitter Breakdown occurs at 30VV - Maximum voltage.

TSB772CK B0G Features

the DC current gain for this device is 100 @ 1A 2V
the vce saturation(Max) is 500mV @ 200mA, 2A
the supplier device package of TO-126

TSB772CK B0G Applications

There are a lot of Taiwan Semiconductor Corporation TSB772CK B0G applications of single BJT transistors.

• Muting
• Inverter
• Interface
• Driver