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2N5012

2N5012

2N5012

Microsemi Corporation

2N5012 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5012 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status OBSOLETE (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-205AA, TO-5-3 Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2007
JESD-609 Code e0
Pbfree Code no
Part Status Obsolete
Moisture Sensitivity Level (MSL) Not Applicable
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
HTS Code 8541.29.00.95
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Number of Elements 1
Configuration SINGLE
Polarity/Channel Type NPN
Transistor Type NPN
Max Collector Current 200mA
DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 25mA 10V
Current - Collector Cutoff (Max) 10nA ICBO
Current - Collector (Ic) (Max) 200mA
Collector Base Voltage (VCBO) 700V
Radiation Hardening No
RoHS Status RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
2N5012 Product Details

2N5012 Overview


In this device, the DC current gain is 30 @ 25mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The maximum collector current is 200mA volts.

2N5012 Features


the DC current gain for this device is 30 @ 25mA 10V

2N5012 Applications


There are a lot of Microsemi Corporation 2N5012 applications of single BJT transistors.

  • Muting
  • Interface
  • Driver
  • Inverter

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