2N5012 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website
SOT-23
2N5012 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Lifecycle Status
OBSOLETE (Last Updated: 1 month ago)
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-205AA, TO-5-3 Metal Can
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-65°C~200°C TJ
Packaging
Bulk
Published
2007
JESD-609 Code
e0
Pbfree Code
no
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
Not Applicable
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
TIN LEAD
HTS Code
8541.29.00.95
Max Power Dissipation
1W
Terminal Position
BOTTOM
Terminal Form
WIRE
Number of Elements
1
Configuration
SINGLE
Polarity/Channel Type
NPN
Transistor Type
NPN
Max Collector Current
200mA
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 25mA 10V
Current - Collector Cutoff (Max)
10nA ICBO
Current - Collector (Ic) (Max)
200mA
Collector Base Voltage (VCBO)
700V
Radiation Hardening
No
RoHS Status
RoHS Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
2N5012 Product Details
2N5012 Overview
In this device, the DC current gain is 30 @ 25mA 10V, which is calculated by taking the ratio of the base current to collector current and dividing transistor by two.The maximum collector current is 200mA volts.
2N5012 Features
the DC current gain for this device is 30 @ 25mA 10V
2N5012 Applications
There are a lot of Microsemi Corporation 2N5012 applications of single BJT transistors.