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2N5154

2N5154

2N5154

Microsemi Corporation

2N5154 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

2N5154 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 12 Weeks
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Package / Case TO-39
Number of Pins 3
Packaging Bulk
JESD-609 Code e0
Part Status Active
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN LEAD
Max Operating Temperature 200°C
Min Operating Temperature -65°C
Subcategory Other Transistors
Max Power Dissipation 1W
Terminal Position BOTTOM
Terminal Form WIRE
Number of Elements 1
Polarity NPN
Configuration Single
Power Dissipation 1W
Collector Emitter Voltage (VCEO) 80V
Max Collector Current 2A
Collector Base Voltage (VCBO) 100V
Emitter Base Voltage (VEBO) 5.5V
DC Current Gain-Min (hFE) 40
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
100 $22.36330 $2236.33
2N5154 Product Details

2N5154 Overview


An emitter's base voltage can be kept at 5.5V to gain high efficiency.A maximum collector current of 2A volts is possible.

2N5154 Features


the emitter base voltage is kept at 5.5V

2N5154 Applications


There are a lot of Microsemi Corporation 2N5154 applications of single BJT transistors.

  • Interface
  • Inverter
  • Driver
  • Muting

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