2SC5200RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
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2SC5200RTU Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
6 Weeks
Lifecycle Status
LAST SHIPMENTS (Last Updated: 1 week ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-264-3, TO-264AA
Weight
6.756g
Transistor Element Material
SILICON
Operating Temperature
-50°C~150°C TJ
Packaging
Tube
Published
2015
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Obsolete
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
150W
Frequency
30MHz
Base Part Number
2SC5200
JESD-30 Code
R-PSFM-T3
Number of Elements
1
Element Configuration
Single
Power Dissipation
150W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
NPN
Transistor Type
NPN
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
17A
DC Current Gain (hFE) (Min) @ Ic, Vce
55 @ 1A 5V
Current - Collector Cutoff (Max)
5μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Collector Emitter Breakdown Voltage
250V
Transition Frequency
30MHz
Collector Base Voltage (VCBO)
250V
Emitter Base Voltage (VEBO)
5V
hFE Min
55
Radiation Hardening
No
RoHS Status
RoHS Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$1.911392
$1.911392
10
$1.803200
$18.032
100
$1.701132
$170.1132
500
$1.604842
$802.421
1000
$1.514001
$1514.001
2SC5200RTU Product Details
2SC5200RTU Overview
DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 55 @ 1A 5V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 800mA, 8A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As a result, the part has a transition frequency of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 17A volts at Single BJT transistors maximum.
2SC5200RTU Features
the DC current gain for this device is 55 @ 1A 5V the vce saturation(Max) is 3V @ 800mA, 8A the emitter base voltage is kept at 5V a transition frequency of 30MHz
2SC5200RTU Applications
There are a lot of ON Semiconductor 2SC5200RTU applications of single BJT transistors.