Welcome to Hotenda.com Online Store!

logo
userjoin
Home

2SC5200RTU

2SC5200RTU

2SC5200RTU

ON Semiconductor

2SC5200RTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SC5200RTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 6 Weeks
Lifecycle Status LAST SHIPMENTS (Last Updated: 1 week ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-264-3, TO-264AA
Weight 6.756g
Transistor Element Material SILICON
Operating Temperature -50°C~150°C TJ
Packaging Tube
Published 2015
JESD-609 Code e3
Pbfree Code yes
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 150W
Frequency 30MHz
Base Part Number 2SC5200
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Power Dissipation 150W
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 17A
DC Current Gain (hFE) (Min) @ Ic, Vce 55 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage 250V
Transition Frequency 30MHz
Collector Base Voltage (VCBO) 250V
Emitter Base Voltage (VEBO) 5V
hFE Min 55
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $1.911392 $1.911392
10 $1.803200 $18.032
100 $1.701132 $170.1132
500 $1.604842 $802.421
1000 $1.514001 $1514.001
2SC5200RTU Product Details

2SC5200RTU Overview


DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 55 @ 1A 5V DC current gain.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 3V @ 800mA, 8A.A high level of efficiency can be achieved if the base voltage of the emitter remains at 5V.As a result, the part has a transition frequency of 30MHz.Single BJT transistor is possible for the collector current to fall as low as 17A volts at Single BJT transistors maximum.

2SC5200RTU Features


the DC current gain for this device is 55 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at 5V
a transition frequency of 30MHz

2SC5200RTU Applications


There are a lot of ON Semiconductor 2SC5200RTU applications of single BJT transistors.

  • Muting
  • Driver
  • Inverter
  • Interface

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News