BC856BW,115 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Nexperia USA Inc. stock available on our website
SOT-23
BC856BW,115 Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Mounting Type
Surface Mount
Package / Case
SC-70, SOT-323
Number of Pins
3
Supplier Device Package
SC-70
Operating Temperature
150°C TJ
Packaging
Tape & Reel (TR)
Published
2009
Series
Automotive, AEC-Q101
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Base Part Number
BC856
Polarity
PNP
Power Dissipation
200mW
Power - Max
200mW
Transistor Type
PNP
DC Current Gain (hFE) (Min) @ Ic, Vce
220 @ 2mA 5V
Current - Collector Cutoff (Max)
15nA ICBO
Vce Saturation (Max) @ Ib, Ic
600mV @ 5mA, 100mA
Voltage - Collector Emitter Breakdown (Max)
65V
Current - Collector (Ic) (Max)
100mA
Frequency - Transition
100MHz
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
BC856BW,115 Product Details
BC856BW,115 Overview
This device has a DC current gain of 220 @ 2mA 5V, which is the ratio between the collector current and the base current.A VCE saturation (Max) of 600mV @ 5mA, 100mA means Ic has reached its maximum value(saturated).Product package SC-70 comes from the supplier.A 65V maximal voltage - Collector Emitter Breakdown is present in the device.
BC856BW,115 Features
the DC current gain for this device is 220 @ 2mA 5V the vce saturation(Max) is 600mV @ 5mA, 100mA the supplier device package of SC-70
BC856BW,115 Applications
There are a lot of Nexperia USA Inc. BC856BW,115 applications of single BJT transistors.