NSS30070MR6T1G Overview

DC current gain' is equal to the ratio of the collector current to the base current, something like Ic/Ib, and this device has 150 @ 100mA 3V DC current gain.The collector emitter saturation voltage is 400mV, which allows for maximum design flexibility.Saturation of VCE means Ic is at its maximum value (saturated), and VCE saturation (Max) is 400mV @ 70mA, 700mA.The base voltage of the emitter can be kept at 5V to achieve high efficiency.A fuse's current rating indicates how much current it will be able to carry over an indefinite period, and this device has a current rating of (-700mA).Single BJT transistor can take a breakdown input voltage of 30V volts.A maximum collector current of 700mA volts can be achieved.

NSS30070MR6T1G Features

the DC current gain for this device is 150 @ 100mA 3V
a collector emitter saturation voltage of 400mV
the vce saturation(Max) is 400mV @ 70mA, 700mA
the emitter base voltage is kept at 5V
the current rating of this device is -700mA

NSS30070MR6T1G Applications

There are a lot of ON Semiconductor NSS30070MR6T1G applications of single BJT transistors.

• Driver
• Inverter
• Interface
• Muting