BUH100 Overview

As dc = Ic/Ib, DC current gain is the ratio of base current to collector current, and DC current gain for this device is 10 @ 5A 5V.Single BJT transistor has a collector emSingle BJT transistorter saturation voltage of 500mV, which allows maximum flexibilSingle BJT transistory in design.VCE saturation indicates Ic is at maximum level (saturated), whereas vce saturation (Max) indicates there is no saturation.Keeping the emitter base voltage at 10V allows for a high level of efficiency.Normally, a fuse's current rating refers to how much current it can carry without deteriorating too much, which in this case is 10A.TO-220AB is the supplier device package for this product.A negative maximal voltage - Collector Emitter Breakdown can be observed in the device.A maximum collector current of 10A volts is possible.

BUH100 Features

the DC current gain for this device is 10 @ 5A 5V
a collector emitter saturation voltage of 500mV
the vce saturation(Max) is 750mV @ 1.5A, 7A
the emitter base voltage is kept at 10V
the current rating of this device is 10A
the supplier device package of TO-220AB

BUH100 Applications

There are a lot of ON Semiconductor BUH100 applications of single BJT transistors.

• Inverter
• Interface
• Muting
• Driver