APT10035LLLG

new-10%

Manufacturer part number:APT10035LLLG

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 1KV 28A 3-Pin(3+Tab) TO-264

Case Package:SOT-23

Datasheet:APT10035LLLG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	15 Weeks
Lifecycle Status	IN PRODUCTION (Last Updated: 1 month ago)
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1997
Series	POWER MOS 7®
JESD-609 Code	e1
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	FET General Purpose Power
Voltage - Rated DC	1kV
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	28A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSFM-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	690W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	690W
Case Connection	DRAIN
Turn On Delay Time	12 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	350m Ω @ 14A, 10V
Vgs(th) (Max) @ Id	5V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	5185pF @ 25V
Current - Continuous Drain (Id) @ 25°C	28A Tc
Gate Charge (Qg) (Max) @ Vgs	186nC @ 10V
Rise Time	10ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	9 ns
Turn-Off Delay Time	36 ns
Continuous Drain Current (ID)	28A
Gate to Source Voltage (Vgs)	30V
Drain-source On Resistance-Max	0.35Ohm
Avalanche Energy Rating (Eas)	3000 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free