APT102GA60B2

new-10%

Manufacturer part number:APT102GA60B2

Manufacturer:Microsemi Corporation

Description:IGBT 600V 183A 780W TO247

Case Package:SOT-23

Datasheet:APT102GA60B2 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	POWER MOS 8™
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	TIN SILVER COPPER
Additional Feature	LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	780W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Power - Max	780W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	183A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Turn On Time	64 ns
Test Condition	400V, 62A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 62A
Turn Off Time-Nom (toff)	389 ns
IGBT Type	PT
Gate Charge	294nC
Current - Collector Pulsed (Icm)	307A
Td (on/off) @ 25°C	28ns/212ns
Switching Energy	1.354mJ (on), 1.614mJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6V
Radiation Hardening	No
RoHS Status	RoHS Compliant