APT10M09B2VFRG

new-10%

Manufacturer part number:APT10M09B2VFRG

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 100V 100A T-MAX

Case Package:SOT-23

Datasheet:APT10M09B2VFRG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2004
Series	POWER MOS V®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Voltage - Rated DC	100V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Current Rating	100A
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	3
JESD-30 Code	R-PSIP-T3
Qualification Status	Not Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	625W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	9m Ω @ 50A, 10V
Vgs(th) (Max) @ Id	4V @ 2.5mA
Input Capacitance (Ciss) (Max) @ Vds	9875pF @ 25V
Current - Continuous Drain (Id) @ 25°C	100A Tc
Gate Charge (Qg) (Max) @ Vgs	350nC @ 10V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Continuous Drain Current (ID)	100A
Drain-source On Resistance-Max	0.009Ohm
Pulsed Drain Current-Max (IDM)	400A
Avalanche Energy Rating (Eas)	3000 mJ
RoHS Status	RoHS Compliant
Lead Free	Lead Free