Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2005
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	PURE MATTE TIN
Additional Feature	FAST SWITCHING
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	156W
Current Rating	25A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	ISOLATED
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	1.2kV
Max Collector Current	25A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	12 ns
Test Condition	800V, 8A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3V @ 15V, 8A
Turn Off Time-Nom (toff)	161 ns
IGBT Type	NPT
Gate Charge	65nC
Current - Collector Pulsed (Icm)	44A
Td (on/off) @ 25°C	7ns/100ns
Switching Energy	300μJ (on), 285μJ (off)
Gate-Emitter Voltage-Max	30V
Gate-Emitter Thr Voltage-Max	6.5V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free

APT11GF120KRG

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