STGB35N35LZT4

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Manufacturer part number:STGB35N35LZT4

Manufacturer:STMicroelectronics

Description:STGB35N35LZT4 datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGB35N35LZT4 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Surface Mount
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~175°C TJ
Packaging	Tape & Reel (TR)
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	Matte Tin (Sn) - annealed
Additional Feature	VOLTAGE CLAMPING
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	176W
Terminal Position	DUAL
Terminal Form	GULL WING
Peak Reflow Temperature (Cel)	245
Base Part Number	STGB35
Pin Count	3
JESD-30 Code	R-PDSO-G2
Number of Elements	1
Element Configuration	Single
Power Dissipation	176W
Case Connection	COLLECTOR
Input Type	Logic
Turn On Delay Time	1.1 μs
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	28 μs
Collector Emitter Voltage (VCEO)	380V
Max Collector Current	40A
Collector Emitter Breakdown Voltage	345V
Collector Emitter Saturation Voltage	1.15V
Max Breakdown Voltage	345V
Turn On Time	7600 ns
Test Condition	300V, 15A, 5V
Vce(on) (Max) @ Vge, Ic	1.7V @ 4.5V, 15A
Turn Off Time-Nom (toff)	37000 ns
Gate Charge	49nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	1.1μs/26.5μs
Gate-Emitter Voltage-Max	12V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free