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IRG4BC30WSTRR

  • IRG4BC30WSTRR
  • IRG4BC30WSTRR

IRG4BC30WSTRR

IRG4BC30WSTRR

Infineon Technologies

IRG4BC30WSTRR datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IRG4BC30WSTRR Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Surface Mount
Package / Case TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Packaging Tape & Reel (TR)
Published 2017
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Base Part Number IRG4BC30W-S
Input Type Standard
Power - Max 100W
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 23A
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 12A
RoHS Status Non-RoHS Compliant
IRG4BC30WSTRR Product Details

IRG4BC30WSTRR Description


GATE BIPOLAR TRANSISTOR WITH INSULATION



IRG4BC30WSTRR Features


?Fast (1–5 kHz in hard switching, >20 kHz in resonant mode), designed for medium operating frequencies.


?Compared to Generation 3, the Generation 4 IGBT design offers tighter parameter distribution and greater efficiency.


?TO-220AB packaging, which is industry standard


?Lead-Free



IRG4BC30WSTRR Applications


Switching applications


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