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APT15GP60BDQ1G

APT15GP60BDQ1G

APT15GP60BDQ1G

Microsemi Corporation

Trans IGBT Chip N-CH 600V 56A 3-Pin(3+Tab) TO-247

SOT-23

APT15GP60BDQ1G Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 30 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series POWER MOS 7®
JESD-609 Code e1
Pbfree Code yes
Part Status Not For New Designs
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish TIN SILVER COPPER
Additional Feature LOW CONDUCTION LOSS
Voltage - Rated DC 600V
Max Power Dissipation 250W
Current Rating 15A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Turn On Delay Time 8 ns
Power - Max 250W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Turn-Off Delay Time 29 ns
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 56A
JEDEC-95 Code TO-247AD
Collector Emitter Breakdown Voltage 600V
Turn On Time 20 ns
Test Condition 400V, 15A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.7V @ 15V, 15A
Turn Off Time-Nom (toff) 160 ns
IGBT Type PT
Gate Charge 55nC
Current - Collector Pulsed (Icm) 65A
Td (on/off) @ 25°C 8ns/29ns
Switching Energy 130μJ (on), 120μJ (off)
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
93 $5.94989 $553.33977

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