AIGW50N65F5XKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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AIGW50N65F5XKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
39 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2012
Series
Automotive, AEC-Q101, Trenchstop™ 5
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Input Type
Standard
Power - Max
270W
Voltage - Collector Emitter Breakdown (Max)
650V
Test Condition
400V, 25A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.1V @ 15V, 50A
IGBT Type
Trench
Gate Charge
1018nC
Current - Collector Pulsed (Icm)
150A
Td (on/off) @ 25°C
21ns/156ns
Switching Energy
490μJ (on), 140μJ (off)
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$39.416400
$39.4164
10
$37.185283
$371.85283
100
$35.080456
$3508.0456
500
$33.094770
$16547.385
1000
$31.221481
$31221.481
AIGW50N65F5XKSA1 Product Details
AIGW50N65F5XKSA1 Description
The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.