FGY75T95SQDT

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Manufacturer part number:FGY75T95SQDT

Manufacturer:ON Semiconductor

Description:FGY75T95SQDT datasheet pdf and Transistors - IGBTs - Single product details from ON Semiconductor stock available on our website

Case Package:SOT-23

Datasheet:FGY75T95SQDT Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Mounting Type	Through Hole
Package / Case	TO-247-3 Variant
Operating Temperature	-55°C~175°C TJ
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	Not Applicable
Input Type	Standard
Power - Max	434W
Reverse Recovery Time	259ns
Voltage - Collector Emitter Breakdown (Max)	950V
Current - Collector (Ic) (Max)	150A
Test Condition	600V, 75A, 4.7 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.11V @ 15V, 75A
IGBT Type	Trench Field Stop
Gate Charge	137nC
Current - Collector Pulsed (Icm)	300A
Td (on/off) @ 25°C	28.8ns/117ns
Switching Energy	8.8mJ (on), 3.2mJ (off)
RoHS Status	Non-RoHS Compliant

Quantity	Unit Price	Ext. Price
1	$9.52000	$9.52
500	$9.4248	$4712.4
1000	$9.3296	$9329.6
1500	$9.2344	$13851.6
2000	$9.1392	$18278.4
2500	$9.044	$22610

FGY75T95SQDT Description

FGY75T95SQDT transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes FGY75T95SQDT MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

FGY75T95SQDT Features

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

FGY75T95SQDT Applications

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display