IXGK75N250

new-10%

Manufacturer part number:IXGK75N250

Manufacturer:IXYS

Description:IGBT 2500V 170A 780W TO264

Case Package:SOT-23

Datasheet:IXGK75N250 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	28 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-264-3, TO-264AA
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2010
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	780W
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Power Dissipation	780W
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	2.5kV
Max Collector Current	170A
Collector Emitter Breakdown Voltage	2.5kV
Voltage - Collector Emitter Breakdown (Max)	2500V
Collector Emitter Saturation Voltage	2.7V
Input Capacitance	9nF
Turn On Time	305 ns
Vce(on) (Max) @ Vge, Ic	3.6V @ 15V, 150A
Turn Off Time-Nom (toff)	420 ns
IGBT Type	NPT
Gate Charge	410nC
Current - Collector Pulsed (Icm)	530A
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Radiation Hardening	No
RoHS Status	ROHS3 Compliant