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APT15GT60BRG

APT15GT60BRG

APT15GT60BRG

Microsemi Corporation

Trans IGBT Chip N-CH 600V 42A 3-Pin(3+Tab) TO-247

SOT-23

APT15GT60BRG Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 24 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-247-3
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 1999
Series Thunderbolt IGBT®
JESD-609 Code e1
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
Terminal Finish TIN SILVER COPPER
Additional Feature AVALANCHE RATED
Subcategory Insulated Gate BIP Transistors
Voltage - Rated DC 600V
Max Power Dissipation 184W
Current Rating 42A
Pin Count 3
JESD-30 Code R-PSFM-T3
Number of Elements 1
Element Configuration Single
Case Connection COLLECTOR
Input Type Standard
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 42A
Collector Emitter Breakdown Voltage 600V
Turn On Time 24 ns
Test Condition 400V, 15A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.5V @ 15V, 15A
Turn Off Time-Nom (toff) 258 ns
IGBT Type NPT
Gate Charge 75nC
Current - Collector Pulsed (Icm) 45A
Td (on/off) @ 25°C 6ns/105ns
Switching Energy 150μJ (on), 215μJ (off)
Gate-Emitter Voltage-Max 30V
Gate-Emitter Thr Voltage-Max 5V
Radiation Hardening No
RoHS Status RoHS Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
131 $4.21542 $552.22002

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