SIGC11T60NCX1SA2                           Description

The IGBT combines, in a single device, a control input with a MOS structure and a bipolar power transistor that acts as an output switch. IGBTs are suitable for high-voltage, high-current applications. They are designed to drive high-power applications with a low-power input.

SIGC11T60NCX1SA2                         Applications

? Industrial Motor Drive

? UPS

? Solar Inverters

? Welding

SIGC11T60NCX1SA2                         Features

High speed H5 technology offering

*Ultra low loss switching thanks to Kelvin emitter pin in combination with TRENCHSTOPM 5

*Best-in-class efficiency in hard switching and resonant topologies

·Plug and play replacement of previous generation IGBTs650V breakdown voltage Low gate charge QG

·IGBT copacked with RAPID 1 fast and soft antiparallel diode Maximum junction temperature175°C