APT200GN60B2G

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Manufacturer part number:APT200GN60B2G

Manufacturer:Microsemi Corporation

Description:IGBT 600V 283A 682W TO247

Case Package:SOT-23

Datasheet:APT200GN60B2G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Operating Temperature	-55°C~175°C TJ
Packaging	Tube
Published	1999
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	682W
Pin Count	3
Element Configuration	Single
Input Type	Standard
Turn On Delay Time	50 ns
Power - Max	682W
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	560 ns
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	283A
JEDEC-95 Code	TO-247AC
Collector Emitter Breakdown Voltage	600V
Test Condition	400V, 200A, 1 Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.85V @ 15V, 200A
IGBT Type	Trench Field Stop
Gate Charge	1180nC
Current - Collector Pulsed (Icm)	600A
Td (on/off) @ 25°C	50ns/560ns
Switching Energy	13mJ (on), 11mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6.5V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free