APT31N80JC3

new-10%

Manufacturer part number:APT31N80JC3

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 800V 31A SOT-227

Case Package:SOT-23

Datasheet:APT31N80JC3 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	4
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2006
Series	CoolMOS™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	4
Additional Feature	UL RECOGNIZED, AVALANCHE RATED
Subcategory	FET General Purpose Power
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	31A
Pin Count	4
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	833W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	833W
Case Connection	ISOLATED
Turn On Delay Time	25 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	145m Ω @ 22A, 10V
Vgs(th) (Max) @ Id	3.9V @ 2mA
Input Capacitance (Ciss) (Max) @ Vds	4510pF @ 25V
Current - Continuous Drain (Id) @ 25°C	31A Tc
Gate Charge (Qg) (Max) @ Vgs	355nC @ 10V
Rise Time	15ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	6 ns
Turn-Off Delay Time	70 ns
Continuous Drain Current (ID)	31A
Gate to Source Voltage (Vgs)	20V
Pulsed Drain Current-Max (IDM)	93A
Avalanche Energy Rating (Eas)	670 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free