APT35GP120BG

new-10%

Manufacturer part number:APT35GP120BG

Manufacturer:Microsemi Corporation

Description:IGBT 1200V 96A 543W TO247

Case Package:SOT-23

Datasheet:APT35GP120BG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	23 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Additional Feature	ULTRA FAST, LOW CONDUCTION LOSS
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	1.2kV
Max Power Dissipation	543W
Current Rating	96A
Pin Count	3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	3.9V
Max Collector Current	96A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	1.2kV
Voltage - Collector Emitter Breakdown (Max)	1200V
Turn On Time	36 ns
Test Condition	600V, 35A, 5 Ω, 15V
Vce(on) (Max) @ Vge, Ic	3.9V @ 15V, 35A
Turn Off Time-Nom (toff)	222 ns
IGBT Type	PT
Gate Charge	150nC
Current - Collector Pulsed (Icm)	140A
Td (on/off) @ 25°C	16ns/94ns
Switching Energy	750μJ (on), 680μJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	6V
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free