APT38N60SC6

new-10%

Manufacturer part number:APT38N60SC6

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 600V 38A 3-Pin(2+Tab) D3PAK

Case Package:SOT-23

Datasheet:APT38N60SC6 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mounting Type	Surface Mount
Package / Case	TO-263-3, D2Pak (2 Leads + Tab), TO-263AB
Surface Mount	YES
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Series	CoolMOS™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	TIN
Additional Feature	AVALANCHE RATED, ULTRA LOW RESISTANCE
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Terminal Form	GULL WING
Pin Count	3
JESD-30 Code	R-PSSO-G2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	278W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	99m Ω @ 18A, 10V
Vgs(th) (Max) @ Id	3.5V @ 1.2mA
Input Capacitance (Ciss) (Max) @ Vds	2826pF @ 25V
Current - Continuous Drain (Id) @ 25°C	38A Tc
Gate Charge (Qg) (Max) @ Vgs	112nC @ 10V
Drain to Source Voltage (Vdss)	600V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Drain Current-Max (Abs) (ID)	38A
Drain-source On Resistance-Max	0.099Ohm
Pulsed Drain Current-Max (IDM)	112A
DS Breakdown Voltage-Min	600V
Avalanche Energy Rating (Eas)	796 mJ
RoHS Status	Non-RoHS Compliant