STGW60H65FB Description

These advanced proprietary trench gate and field-stop structures-based IGBT devices were created. These components are a part of the new HB series of IGBTs, which offer the best conduction and switching loss trade-offs for maximizing the efficiency of any frequency converter. Additionally, a highly narrow parameter distribution and a little positive VCE(sat) temperature coefficient produce safer paralleling operation.

STGW60H65FB Features

? TJ = 175 °C is the maximum junction temperature.

? Series of high-speed switches

? Tail current was reduced.

? IC = 60 A, VCE(sat) = 1.6 V (typ.)

? Closely spaced parameter distribution

? Paralleling safely

? Low thermal conductivity

STGW60H65FB Applications

• solar power inverters

• The use of high frequency converters