STGW30H65FB Description

These devices are IGBTs developed using an advanced proprietary trench gate field-stop structure. These devices are part of the new HB series of IGBTs, which represent an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive V_CE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operation.

STGW30H65FB Features

• Maximum junction temperature: T_J = 175 °C

• High speed switching series

• Minimized tail current

• V_CE(sat) = 1.55 V (typ.) @ I_C = 30 A

• Tight parameters distribution

• Safe paralleling

• Low thermal resistance

STGW30H65FB Applications

• Photovoltaic inverters

• Power factor correction

• Welding

• High-frequency converters

• New Energy Vehicle

• Wind Power Generation

• Smart Grid