APT50GT60BRG

new-10%

Manufacturer part number:APT50GT60BRG

Manufacturer:Microsemi Corporation

Description:IGBT 600V 110A 446W TO247

Case Package:SOT-23

Datasheet:APT50GT60BRG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	24 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-247-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	1999
Series	Thunderbolt IGBT®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Terminal Finish	Tin/Silver/Copper (Sn/Ag/Cu)
Voltage - Rated DC	600V
Max Power Dissipation	446W
Current Rating	110A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Case Connection	COLLECTOR
Input Type	Standard
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	110A
JEDEC-95 Code	TO-247AD
Collector Emitter Breakdown Voltage	600V
Turn On Time	46 ns
Test Condition	400V, 50A, 4.3 Ω, 15V
Vce(on) (Max) @ Vge, Ic	2.5V @ 15V, 50A
Turn Off Time-Nom (toff)	365 ns
IGBT Type	NPT
Gate Charge	240nC
Current - Collector Pulsed (Icm)	150A
Td (on/off) @ 25°C	14ns/240ns
Switching Energy	995μJ (on), 1070μJ (off)
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free