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IGW40N120H3FKSA1

IGW40N120H3FKSA1

IGW40N120H3FKSA1

Infineon Technologies

IGW40N120H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

IGW40N120H3FKSA1 Datasheet

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In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 16 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Surface Mount NO
Transistor Element Material SILICON
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2012
Series TrenchStop®
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin (Sn)
Terminal Position SINGLE
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Pin Count 3
JESD-30 Code R-PSFM-T3
Qualification Status Not Qualified
Number of Elements 1
Configuration SINGLE
Input Type Standard
Power - Max 483W
Transistor Application POWER CONTROL
Polarity/Channel Type N-CHANNEL
Voltage - Collector Emitter Breakdown (Max) 1200V
Current - Collector (Ic) (Max) 80A
Turn On Time 78 ns
Test Condition 600V, 40A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2.4V @ 15V, 40A
Turn Off Time-Nom (toff) 414 ns
IGBT Type Trench Field Stop
Gate Charge 185nC
Current - Collector Pulsed (Icm) 160A
Td (on/off) @ 25°C 30ns/290ns
Switching Energy 3.16mJ
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $7.71000 $7.71
10 $7.02000 $70.2
240 $5.90542 $1417.3008
720 $5.21278 $3753.2016
1,200 $4.61048 $4.61048
IGW40N120H3FKSA1 Product Details

IGW40N120H3FKSA1 Description

 

IGW40N120H3FKSA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGW40N120H3FKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IGW40N120H3FKSA1 has the common source configuration.

 

 

IGW40N120H3FKSA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

IGW40N120H3FKSA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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