IGW40N120H3FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IGW40N120H3FKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~175°C TJ
Packaging
Tube
Published
2012
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Input Type
Standard
Power - Max
483W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
80A
Turn On Time
78 ns
Test Condition
600V, 40A, 12 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.4V @ 15V, 40A
Turn Off Time-Nom (toff)
414 ns
IGBT Type
Trench Field Stop
Gate Charge
185nC
Current - Collector Pulsed (Icm)
160A
Td (on/off) @ 25°C
30ns/290ns
Switching Energy
3.16mJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$7.71000
$7.71
10
$7.02000
$70.2
240
$5.90542
$1417.3008
720
$5.21278
$3753.2016
1,200
$4.61048
$4.61048
IGW40N120H3FKSA1 Product Details
IGW40N120H3FKSA1 Description
IGW40N120H3FKSA1 transistor is a MOS field-effect RF power transistor designed to be used in signal applications. The special low thermal resistance packaging makes IGW40N120H3FKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. Infineon Technologies IGW40N120H3FKSA1 has the common source configuration.