IGW15T120FKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website
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IGW15T120FKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
16 Weeks
Mounting Type
Through Hole
Package / Case
TO-247-3
Surface Mount
NO
Transistor Element Material
SILICON
Operating Temperature
-40°C~150°C TJ
Packaging
Tube
Published
2008
Series
TrenchStop®
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Tin (Sn)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
JESD-30 Code
R-PSFM-T3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE
Case Connection
COLLECTOR
Input Type
Standard
Power - Max
110W
Transistor Application
POWER CONTROL
Polarity/Channel Type
N-CHANNEL
JEDEC-95 Code
TO-247AD
Voltage - Collector Emitter Breakdown (Max)
1200V
Current - Collector (Ic) (Max)
30A
Turn On Time
85 ns
Test Condition
600V, 15A, 56 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2.2V @ 15V, 15A
Turn Off Time-Nom (toff)
720 ns
IGBT Type
NPT, Trench Field Stop
Gate Charge
85nC
Current - Collector Pulsed (Icm)
45A
Td (on/off) @ 25°C
50ns/520ns
Switching Energy
2.7mJ
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$17.503309
$17.503309
10
$16.512555
$165.12555
100
$15.577882
$1557.7882
500
$14.696115
$7348.0575
1000
$13.864260
$13864.26
IGW15T120FKSA1 Product Details
IGW15T120FKSA1 Description
IGW15T120FKSA1 is a 1200v Low Loss IGBT in TrenchStop? and Fieldstop technology. The transistor IGW15T120FKSA1 is designed for Frequency Converters and Uninterrupted Power Supply applications due to the following features. The Operating and Storage Temperature Range is between -40 and 150℃. And the transistor IGW15T120FKSA1 is in the PG-TO-247-3 package with 110W Power dissipation.
IGW15T120FKSA1 Features
Approx.1.0V reduced VCeE(sat) compared to BUP313
Short circuit withstand time - 10μs
NPT technology offers easy parallel switching capability due to a positive temperature coefficient in Vce(sat)
Low EMI
Low Gate Charge
Qualified according to JEDEC' for target applications