STGP10NB60SD

new-10%

Manufacturer part number:STGP10NB60SD

Manufacturer:STMicroelectronics

Description:STGP10NB60SD datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

Case Package:SOT-23

Datasheet:STGP10NB60SD Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	8 Weeks
Lifecycle Status	ACTIVE (Last Updated: 8 months ago)
Contact Plating	Tin
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Weight	6.000006g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	PowerMESH™
JESD-609 Code	e3
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Voltage - Rated DC	600V
Max Power Dissipation	80W
Current Rating	20A
Base Part Number	STGP10
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Element Configuration	Single
Power Dissipation	3.5W
Case Connection	COLLECTOR
Input Type	Standard
Turn On Delay Time	700 ns
Power - Max	80W
Transistor Application	POWER CONTROL
Rise Time	460ns
Polarity/Channel Type	N-CHANNEL
Turn-Off Delay Time	1.2 μs
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	29A
Reverse Recovery Time	37 ns
Continuous Drain Current (ID)	10A
JEDEC-95 Code	TO-220AB
Collector Emitter Breakdown Voltage	600V
Drain to Source Breakdown Voltage	600V
Turn On Time	1160 ns
Test Condition	480V, 10A, 1k Ω, 15V
Vce(on) (Max) @ Vge, Ic	1.75V @ 15V, 10A
Turn Off Time-Nom (toff)	3100 ns
Gate Charge	33nC
Current - Collector Pulsed (Icm)	80A
Td (on/off) @ 25°C	700ns/1.2μs
Switching Energy	600μJ (on), 5mJ (off)
Gate-Emitter Voltage-Max	20V
Gate-Emitter Thr Voltage-Max	5V
Height	9.15mm
Length	10.4mm
Width	4.6mm
Radiation Hardening	No
RoHS Status	ROHS3 Compliant
Lead Free	Lead Free