APT7F80K

new-10%

Manufacturer part number:APT7F80K

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 800V 7A TO-220

Case Package:SOT-23

Datasheet:APT7F80K Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Series	POWER MOS 8™
JESD-609 Code	e3
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	PURE MATTE TIN
Additional Feature	AVALANCHE RATED, HIGH RELIABILITY
Voltage - Rated DC	800V
Technology	MOSFET (Metal Oxide)
Terminal Position	SINGLE
Current Rating	7.1A
Pin Count	3
JESD-30 Code	R-PSFM-T3
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	225W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	225W
Case Connection	DRAIN
Turn On Delay Time	8 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.5 Ω @ 4A, 10V
Vgs(th) (Max) @ Id	5V @ 500μA
Input Capacitance (Ciss) (Max) @ Vds	1335pF @ 25V
Current - Continuous Drain (Id) @ 25°C	7A Tc
Gate Charge (Qg) (Max) @ Vgs	43nC @ 10V
Rise Time	11ns
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	10 ns
Turn-Off Delay Time	33 ns
Continuous Drain Current (ID)	7A
JEDEC-95 Code	TO-220AB
Gate to Source Voltage (Vgs)	30V
Drain Current-Max (Abs) (ID)	7A
Pulsed Drain Current-Max (IDM)	25A
Avalanche Energy Rating (Eas)	285 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant
Lead Free	Lead Free