STGWT30H60DFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website
SOT-23
STGWT30H60DFB Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
32 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.756003g
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
ECCN Code
EAR99
Max Power Dissipation
260W
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Base Part Number
STGWT30
Element Configuration
Single
Input Type
Standard
Power - Max
260W
Collector Emitter Voltage (VCEO)
600V
Max Collector Current
60A
Reverse Recovery Time
53 ns
Collector Emitter Breakdown Voltage
600V
Collector Emitter Saturation Voltage
1.55V
Test Condition
400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic
2V @ 15V, 30A
IGBT Type
Trench Field Stop
Gate Charge
149nC
Current - Collector Pulsed (Icm)
120A
Td (on/off) @ 25°C
37ns/146ns
Switching Energy
383μJ (on), 293μJ (off)
Height
14.1mm
Length
15.8mm
Width
5mm
RoHS Status
ROHS3 Compliant
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$20.158640
$20.15864
10
$19.017585
$190.17585
100
$17.941118
$1794.1118
500
$16.925583
$8462.7915
1000
$15.967531
$15967.531
STGWT30H60DFB Product Details
STGWT30H60DFB Description
The 600v STGWT30H60DFB is an IGBT developed using an advanced proprietary trench gate field stop structure. The STGWT30H60DFB is a part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.
STGWT30H60DFB Features
Maximum junction temperature: TJ = 175 °C
High-speed switching series
Minimized tail current
Low saturation voltage: VCE(sat) = 1.55 V (Typ.) @ IC = 30 A