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STGWT30H60DFB

STGWT30H60DFB

STGWT30H60DFB

STMicroelectronics

STGWT30H60DFB datasheet pdf and Transistors - IGBTs - Single product details from STMicroelectronics stock available on our website

SOT-23

STGWT30H60DFB Datasheet

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Specifications
Name Value
Type Parameter
Factory Lead Time 32 Weeks
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.756003g
Operating Temperature -55°C~175°C TJ
Packaging Tube
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Max Power Dissipation 260W
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Base Part Number STGWT30
Element Configuration Single
Input Type Standard
Power - Max 260W
Collector Emitter Voltage (VCEO) 600V
Max Collector Current 60A
Reverse Recovery Time 53 ns
Collector Emitter Breakdown Voltage 600V
Collector Emitter Saturation Voltage 1.55V
Test Condition 400V, 30A, 10 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 30A
IGBT Type Trench Field Stop
Gate Charge 149nC
Current - Collector Pulsed (Icm) 120A
Td (on/off) @ 25°C 37ns/146ns
Switching Energy 383μJ (on), 293μJ (off)
Height 14.1mm
Length 15.8mm
Width 5mm
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $20.158640 $20.15864
10 $19.017585 $190.17585
100 $17.941118 $1794.1118
500 $16.925583 $8462.7915
1000 $15.967531 $15967.531
STGWT30H60DFB Product Details

STGWT30H60DFB Description


The 600v STGWT30H60DFB is an IGBT developed using an advanced proprietary trench gate field stop structure. The STGWT30H60DFB is a part of the new HB series of IGBTs, which represents an optimum compromise between conduction and switching loss to maximize the efficiency of any frequency converter. Furthermore, the slightly positive VCE(sat) temperature coefficient and very tight parameter distribution result in safer paralleling operations.



STGWT30H60DFB Features


Maximum junction temperature: TJ = 175 °C

High-speed switching series

Minimized tail current

Low saturation voltage: VCE(sat) = 1.55 V (Typ.) @ IC = 30 A

Tight parameter distribution

Safe paralleling

Positive VCE(sat) temperature coefficient

Low thermal resistance

Very fast soft recovery antiparallel diode



STGWT30H60DFB Applications


Photovoltaic inverters

High-frequency converters

Automotive 

Hybrid, electric & powertrain systems 

Industrial


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