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AIKQ100N60CTXKSA1

AIKQ100N60CTXKSA1

AIKQ100N60CTXKSA1

Infineon Technologies

AIKQ100N60CTXKSA1 datasheet pdf and Transistors - IGBTs - Single product details from Infineon Technologies stock available on our website

SOT-23

AIKQ100N60CTXKSA1 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 39 Weeks
Mounting Type Through Hole
Package / Case TO-247-3
Operating Temperature -40°C~175°C TJ
Packaging Tube
Published 2014
Series Automotive, AEC-Q101, TrenchStop™
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
ECCN Code EAR99
Peak Reflow Temperature (Cel) NOT SPECIFIED
[email protected] Reflow Temperature-Max (s) NOT SPECIFIED
Input Type Standard
Power - Max 714W
Voltage - Collector Emitter Breakdown (Max) 600V
Current - Collector (Ic) (Max) 160A
Test Condition 400V, 100A, 3.6 Ω, 15V
Vce(on) (Max) @ Vge, Ic 2V @ 15V, 100A
IGBT Type Trench Field Stop
Gate Charge 610nC
Current - Collector Pulsed (Icm) 400A
Td (on/off) @ 25°C 30ns/290ns
Switching Energy 3.1mJ (on), 2.5mJ (off)
RoHS Status ROHS3 Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $10.938432 $10.938432
10 $10.319275 $103.19275
100 $9.735165 $973.5165
500 $9.184118 $4592.059
1000 $8.664262 $8664.262
AIKQ100N60CTXKSA1 Product Details

AIKQ100N60CTXKSA1 Description

 

AIKQ100N60CTXKSA1 transistor is a MOS field-effect transistor designed to be used in signal applications. The special low thermal resistance packaging makes AIKQ100N60CTXKSA1 MOSFET suitable for ISM applications in which reliability and durability are essential. It has the common source configuration.

 

 

AIKQ100N60CTXKSA1 Features

 

Gold metalization

Excellent thermal stability

Common source configuration

Thermally enhanced packaging

 

 

AIKQ100N60CTXKSA1 Applications

 

ISM applications

DC large signal applications

Power factor correction

Electronic lamp ballasts

Flat panel display


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