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APTC60DAM35T1G

APTC60DAM35T1G

APTC60DAM35T1G

Microsemi Corporation

Trans MOSFET N-CH 600V 72A 12-Pin Case SP-1

SOT-23

APTC60DAM35T1G Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mount Chassis Mount, Screw
Mounting Type Chassis Mount
Package / Case SP1
Number of Pins 1
Supplier Device Package SP1
Operating Temperature -40°C~150°C TJ
Packaging Bulk
Published 2007
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Max Operating Temperature 150°C
Min Operating Temperature -40°C
Technology MOSFET (Metal Oxide)
Number of Elements 1
Power Dissipation-Max 416W Tc
Power Dissipation 416W
FET Type N-Channel
Rds On (Max) @ Id, Vgs 35mOhm @ 72A, 10V
Vgs(th) (Max) @ Id 3.9V @ 5.4mA
Input Capacitance (Ciss) (Max) @ Vds 14000pF @ 25V
Current - Continuous Drain (Id) @ 25°C 72A Tc
Gate Charge (Qg) (Max) @ Vgs 518nC @ 10V
Drain to Source Voltage (Vdss) 600V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±20V
Continuous Drain Current (ID) 72A
Gate to Source Voltage (Vgs) 20V
Input Capacitance 14nF
Rds On Max 35 mΩ
RoHS Status RoHS Compliant

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