JANTX2N6800

new-10%

Manufacturer part number:JANTX2N6800

Manufacturer:Microsemi Corporation

Description:Trans MOSFET N-CH 400V 3A 3-Pin TO-205AF

Case Package:SOT-23

Datasheet:JANTX2N6800 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-205AD, TO-39-3 Metal Can
Number of Pins	3
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Bulk
Published	1997
Series	Military, MIL-PRF-19500/557
JESD-609 Code	e0
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	3
Terminal Finish	Tin/Lead (Sn/Pb)
Additional Feature	HIGH RELIABILITY
HTS Code	8541.21.00.95
Subcategory	FET General Purpose Power
Technology	MOSFET (Metal Oxide)
Terminal Position	BOTTOM
Terminal Form	WIRE
Peak Reflow Temperature (Cel)	NOT SPECIFIED
Reach Compliance Code	not_compliant
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Reference Standard	MIL-19500
Qualification Status	Qualified
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	800mW Ta 25W Tc
Operating Mode	ENHANCEMENT MODE
Case Connection	DRAIN
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.1 Ω @ 3A, 10V
Vgs(th) (Max) @ Id	4V @ 250μA
Current - Continuous Drain (Id) @ 25°C	3A Tc
Gate Charge (Qg) (Max) @ Vgs	34.75nC @ 10V
Drain to Source Voltage (Vdss)	400V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Continuous Drain Current (ID)	3A
JEDEC-95 Code	TO-205AF
Gate to Source Voltage (Vgs)	20V
Drain Current-Max (Abs) (ID)	3A
Pulsed Drain Current-Max (IDM)	14A
DS Breakdown Voltage-Min	400V
RoHS Status	Non-RoHS Compliant