Welcome to Hotenda.com Online Store!

logo
userjoin
Home

TSM8N70CI C0

TSM8N70CI C0

TSM8N70CI C0

Taiwan Semiconductor Corporation

MOSFET (Metal Oxide) N-Channel 900mOhm @ 4A, 10V ±30V 2006pF @ 25V 32nC @ 10V 700V TO-220-3 Full Pack, Isolated Tab

SOT-23

TSM8N70CI C0 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Mounting Type Through Hole
Package / Case TO-220-3 Full Pack, Isolated Tab
Supplier Device Package ITO-220AB
Operating Temperature 150°C TJ
Part Status Obsolete
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Technology MOSFET (Metal Oxide)
Power Dissipation-Max 40W Tc
FET Type N-Channel
Rds On (Max) @ Id, Vgs 900mOhm @ 4A, 10V
Vgs(th) (Max) @ Id 4V @ 250μA
Input Capacitance (Ciss) (Max) @ Vds 2006pF @ 25V
Current - Continuous Drain (Id) @ 25°C 8A Tc
Gate Charge (Qg) (Max) @ Vgs 32nC @ 10V
Drain to Source Voltage (Vdss) 700V
Drive Voltage (Max Rds On,Min Rds On) 10V
Vgs (Max) ±30V
RoHS Status Non-RoHS Compliant
TSM8N70CI C0 Product Details

TSM8N70CI C0 Overview


With either input grounded, the input capacitance parameter, CI, represents the capacitance between the input terminals of the op amp. This device has a maximum input capacitance of 2006pF @ 25V.Single MOSFETs transistor is necessary to have a drain to source voltage (Vdss) of 700V.Using drive voltage (10V) reduces this device's overall power consumption.

TSM8N70CI C0 Features


a 700V drain to source voltage (Vdss)


TSM8N70CI C0 Applications


There are a lot of Taiwan Semiconductor Corporation
TSM8N70CI C0 applications of single MOSFETs transistors.


  • Lighting
  • Uninterruptible Power Supply
  • AC-DC Power Supply
  • Synchronous Rectification for ATX 1 Server I Telecom PSU
  • Motor drives and Uninterruptible Power Supplies
  • Micro Solar Inverter
  • DC/DC converters
  • Power Tools
  • Motor Drives and Uninterruptible Power Supples
  • Synchronous Rectification

Related Part Number

Get Subscriber

Enter Your Email Address, Get the Latest News