APTGT100DH60T3G

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Manufacturer part number:APTGT100DH60T3G

Manufacturer:Microsemi Corporation

Description:Trans IGBT Module N-CH 600V 150A 16-Pin Case SP-3

Case Package:SOT-23

Datasheet:APTGT100DH60T3G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	22 Weeks
Mount	Screw, Through Hole
Mounting Type	Through Hole
Package / Case	SP3
Number of Pins	16
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
Published	2012
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	11
ECCN Code	EAR99
Subcategory	Insulated Gate BIP Transistors
Max Power Dissipation	340W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Peak Reflow Temperature (Cel)	NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)	NOT SPECIFIED
Pin Count	25
JESD-30 Code	R-XUFM-X11
Qualification Status	Not Qualified
Number of Elements	2
Configuration	Asymmetrical Bridge
Element Configuration	Dual
Case Connection	ISOLATED
Power - Max	340W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	150A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	6.1nF
Turn On Time	180 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 100A
Turn Off Time-Nom (toff)	370 ns
IGBT Type	Trench Field Stop
NTC Thermistor	Yes
Gate-Emitter Voltage-Max	20V
Input Capacitance (Cies) @ Vce	6.1nF @ 25V
VCEsat-Max	1.9 V
RoHS Status	RoHS Compliant