APTGT200H60G

new-10%

Manufacturer part number:APTGT200H60G

Manufacturer:Microsemi Corporation

Description:IGBT MOD TRENCH FULL BRIDGE SP6

Case Package:SOT-23

Datasheet:APTGT200H60G Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	12
Transistor Element Material	SILICON
Operating Temperature	-40°C~175°C TJ
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	12
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Max Power Dissipation	625W
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	12
Number of Elements	4
Configuration	Full Bridge Inverter
Case Connection	ISOLATED
Power - Max	625W
Transistor Application	POWER CONTROL
Polarity/Channel Type	N-CHANNEL
Input	Standard
Collector Emitter Voltage (VCEO)	600V
Max Collector Current	290A
Current - Collector Cutoff (Max)	250μA
Collector Emitter Breakdown Voltage	600V
Input Capacitance	12.3nF
Turn On Time	180 ns
Vce(on) (Max) @ Vge, Ic	1.9V @ 15V, 200A
Turn Off Time-Nom (toff)	370 ns
IGBT Type	Trench Field Stop
NTC Thermistor	No
Input Capacitance (Cies) @ Vce	12.3nF @ 25V
RoHS Status	RoHS Compliant