APTM10UM01FAG

new-10%

Manufacturer part number:APTM10UM01FAG

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 100V 860A SP6

Case Package:SOT-23

Datasheet:APTM10UM01FAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2005
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	5
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	5
JESD-30 Code	R-XUFM-X5
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2500W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.5kW
Case Connection	ISOLATED
Turn On Delay Time	185 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	1.6m Ω @ 275A, 10V
Vgs(th) (Max) @ Id	4V @ 12mA
Input Capacitance (Ciss) (Max) @ Vds	60000pF @ 25V
Current - Continuous Drain (Id) @ 25°C	860A Tc
Gate Charge (Qg) (Max) @ Vgs	2100nC @ 10V
Rise Time	270ns
Drain to Source Voltage (Vdss)	100V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	175 ns
Turn-Off Delay Time	600 ns
Continuous Drain Current (ID)	860A
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	2200A
Avalanche Energy Rating (Eas)	3000 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant