IPP110N20N3GXKSA1 datasheet pdf and Transistors - FETs, MOSFETs - Single product details from Infineon Technologies stock available on our website
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IPP110N20N3GXKSA1 Datasheet
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Specifications
Name
Value
Type
Parameter
Factory Lead Time
13 Weeks
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-220-3
Number of Pins
3
Transistor Element Material
SILICON
Operating Temperature
-55°C~175°C TJ
Packaging
Tube
Published
2006
Series
OptiMOS™
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Terminal Finish
Matte Tin (Sn)
Technology
MOSFET (Metal Oxide)
Terminal Position
SINGLE
Peak Reflow Temperature (Cel)
NOT SPECIFIED
[email protected] Reflow Temperature-Max (s)
NOT SPECIFIED
Pin Count
3
Qualification Status
Not Qualified
Number of Elements
1
Configuration
SINGLE WITH BUILT-IN DIODE
Number of Channels
1
Power Dissipation-Max
300W Tc
Operating Mode
ENHANCEMENT MODE
Power Dissipation
300W
Turn On Delay Time
18 ns
FET Type
N-Channel
Transistor Application
SWITCHING
Rds On (Max) @ Id, Vgs
11m Ω @ 88A, 10V
Vgs(th) (Max) @ Id
4V @ 270μA
Halogen Free
Halogen Free
Input Capacitance (Ciss) (Max) @ Vds
7100pF @ 100V
Current - Continuous Drain (Id) @ 25°C
88A Tc
Gate Charge (Qg) (Max) @ Vgs
87nC @ 10V
Rise Time
26ns
Drive Voltage (Max Rds On,Min Rds On)
10V
Vgs (Max)
±20V
Fall Time (Typ)
11 ns
Turn-Off Delay Time
41 ns
Continuous Drain Current (ID)
88A
JEDEC-95 Code
TO-220AB
Gate to Source Voltage (Vgs)
20V
Max Dual Supply Voltage
200V
Drain to Source Breakdown Voltage
200V
Avalanche Energy Rating (Eas)
560 mJ
Max Junction Temperature (Tj)
175°C
Height
20.7mm
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.300000
$3.3
10
$3.113208
$31.13208
100
$2.936988
$293.6988
500
$2.770744
$1385.372
1000
$2.613909
$2613.909
IPP110N20N3GXKSA1 Product Details
Description
The IPP110N20N3GXKSA1 is an OptiMOSTM3 Power-Transistor. Power transistors are utilized in high-power amplifiers and power supplies. Power transistors are best suited for applications that require a lot of current and voltage. It is a junction transistor that is used in audio and switching circuits and is built to handle high currents and power.
Features
? N-channel, normal level
? Excellent gate charge x R DS(on) product (FOM)
? Very low on-resistance R DS(on)
? 175 °C operating temperature
? Pb-free lead plating; RoHS compliant
? Qualified according to JEDEC1) for target application
? Halogen-free according to IEC61249-2-21
? Ideal for high-frequency switching and synchronous rectification