IXFN24N100

new-10%

IXFN24N100

Manufacturer part number:IXFN24N100

Manufacturer:IXYS

Description:MOSFET N-CH 1KV 24A SOT-227B

Case Package:SOT-23

Datasheet:IXFN24N100 Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	4 Weeks
Mount	Chassis Mount, Panel, Screw
Mounting Type	Chassis Mount
Package / Case	SOT-227-4, miniBLOC
Number of Pins	3
Weight	40g
Transistor Element Material	SILICON
Operating Temperature	-55°C~150°C TJ
Packaging	Tube
Published	2000
Series	HiPerFET™
Pbfree Code	yes
Part Status	Obsolete
Moisture Sensitivity Level (MSL)	Not Applicable
Number of Terminations	4
Termination	Screw
ECCN Code	EAR99
Resistance	390mOhm
Terminal Finish	Nickel (Ni)
Additional Feature	AVALANCHE RATED, UL RECOGNIZED
Subcategory	FET General Purpose Power
Voltage - Rated DC	1kV
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Current Rating	24A
Pin Count	4
JESD-30 Code	R-PUFM-X4
Number of Elements	1
Power Dissipation-Max	568W Tc
Element Configuration	Single
Operating Mode	ENHANCEMENT MODE
Power Dissipation	600W
Case Connection	ISOLATED
Turn On Delay Time	35 ns
FET Type	N-Channel
Transistor Application	SWITCHING
Rds On (Max) @ Id, Vgs	390m Ω @ 12A, 10V
Vgs(th) (Max) @ Id	5.5V @ 8mA
Input Capacitance (Ciss) (Max) @ Vds	8700pF @ 25V
Current - Continuous Drain (Id) @ 25°C	24A Tc
Gate Charge (Qg) (Max) @ Vgs	267nC @ 10V
Rise Time	35ns
Drain to Source Voltage (Vdss)	1000V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±20V
Fall Time (Typ)	21 ns
Turn-Off Delay Time	75 ns
Reverse Recovery Time	250 ns
Continuous Drain Current (ID)	24A
Threshold Voltage	5.5V
Gate to Source Voltage (Vgs)	20V
Drain to Source Breakdown Voltage	1kV
Pulsed Drain Current-Max (IDM)	96A
Dual Supply Voltage	1kV
Recovery Time	250 ns
Isolation Voltage	2.5kV
Nominal Vgs	5.5 V
Height	9.6mm
Length	38.23mm
Width	25.42mm
Radiation Hardening	No
REACH SVHC	No SVHC
RoHS Status	RoHS Compliant
Lead Free	Lead Free