RJ1G08CGNTLL Overview

This type of breakdown is known as "avalanche breakdown", and the energy applied to the MOSFET is called avalanche energy, and the avalanche energy rating (Eas) is 35 mJ.The maximum input capacitance of this device is 2410pF @ 20V, because the input capacitance of an op amp is defined as the difference between the input terminals with one input grounded.As shown in the table below, the drain current of this device is 80A.There is no pulsed drain current maximum for this device based on its rated peak drain current 160A.To maintain normal operation, it's recommended that the DS breakdown voltage be kept above 40V.The drain-to-source voltage (Vdss) of this transistor needs to be at 40V in order to operate.Using drive voltage (4.5V 10V), this device helps reduce its power consumption.

RJ1G08CGNTLL Features

the avalanche energy rating (Eas) is 35 mJ
based on its rated peak drain current 160A.
a 40V drain to source voltage (Vdss)

RJ1G08CGNTLL Applications

There are a lot of ROHM Semiconductor
RJ1G08CGNTLL applications of single MOSFETs transistors.

• Micro Solar Inverter
• DC/DC converters
• Power Tools
• Motor Drives and Uninterruptible Power Supples
• Synchronous Rectification
• Battery Protection Circuit
• Telecom 1 Sever Power Supplies
• Industrial Power Supplies
• PFC stages, hard switching PWM stages and resonant switching
• PWM stages for e.g. PC Silverbox, Adapter, LCD & PDP TV,