APTM20UM03FAG

new-10%

Manufacturer part number:APTM20UM03FAG

Manufacturer:Microsemi Corporation

Description:MOSFET N-CH 200V 580A SP6

Case Package:SOT-23

Datasheet:APTM20UM03FAG Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	36 Weeks
Mount	Chassis Mount, Screw
Mounting Type	Chassis Mount
Package / Case	SP6
Number of Pins	6
Transistor Element Material	SILICON
Operating Temperature	-40°C~150°C TJ
Packaging	Bulk
Published	2012
Series	POWER MOS 7®
JESD-609 Code	e1
Pbfree Code	yes
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Number of Terminations	2
ECCN Code	EAR99
Terminal Finish	TIN SILVER COPPER
Additional Feature	AVALANCHE RATED
Technology	MOSFET (Metal Oxide)
Terminal Position	UPPER
Terminal Form	UNSPECIFIED
Pin Count	2
JESD-30 Code	R-PUFM-X2
Number of Elements	1
Configuration	SINGLE WITH BUILT-IN DIODE
Power Dissipation-Max	2270W Tc
Operating Mode	ENHANCEMENT MODE
Power Dissipation	2.27kW
Turn On Delay Time	32 ns
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	3.6m Ω @ 290A, 10V
Vgs(th) (Max) @ Id	5V @ 15mA
Input Capacitance (Ciss) (Max) @ Vds	43300pF @ 25V
Current - Continuous Drain (Id) @ 25°C	580A Tc
Gate Charge (Qg) (Max) @ Vgs	840nC @ 10V
Rise Time	64ns
Drain to Source Voltage (Vdss)	200V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	116 ns
Turn-Off Delay Time	88 ns
Continuous Drain Current (ID)	580A
Gate to Source Voltage (Vgs)	30V
Pulsed Drain Current-Max (IDM)	2320A
DS Breakdown Voltage-Min	200V
Avalanche Energy Rating (Eas)	3000 mJ
Radiation Hardening	No
RoHS Status	RoHS Compliant