TK9A55DA(STA4,Q,M)

new-10%

Manufacturer part number:TK9A55DA(STA4,Q,M)

Manufacturer:Toshiba Semiconductor and Storage

Description:MOSFET N-CH 550V 8.5A TO-220SIS

Case Package:SOT-23

Datasheet:TK9A55DA(STA4,Q,M) Datasheet

RoHs Status:non-compliant

Name	Value
Type	Parameter
Factory Lead Time	16 Weeks
Mount	Through Hole
Mounting Type	Through Hole
Package / Case	TO-220-3 Full Pack
Number of Pins	3
Supplier Device Package	TO-220SIS
Operating Temperature	150°C TJ
Packaging	Tube
Published	2010
Series	π-MOSVII
Part Status	Active
Moisture Sensitivity Level (MSL)	1 (Unlimited)
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Technology	MOSFET (Metal Oxide)
Power Dissipation-Max	40W Tc
FET Type	N-Channel
Rds On (Max) @ Id, Vgs	860mOhm @ 4.3A, 10V
Vgs(th) (Max) @ Id	4V @ 1mA
Input Capacitance (Ciss) (Max) @ Vds	1050pF @ 25V
Current - Continuous Drain (Id) @ 25°C	8.5A Ta
Gate Charge (Qg) (Max) @ Vgs	20nC @ 10V
Rise Time	25ns
Drain to Source Voltage (Vdss)	550V
Drive Voltage (Max Rds On,Min Rds On)	10V
Vgs (Max)	±30V
Fall Time (Typ)	10 ns
Continuous Drain Current (ID)	8.5A
Gate to Source Voltage (Vgs)	30V
Input Capacitance	1.05nF
Rds On Max	860 mΩ
Radiation Hardening	No
RoHS Status	RoHS Compliant