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JAN2N1486

JAN2N1486

JAN2N1486

Microsemi Corporation

JAN2N1486 datasheet pdf and Transistors - Bipolar (BJT) - Single product details from Microsemi Corporation stock available on our website

SOT-23

JAN2N1486 Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Lifecycle Status IN PRODUCTION (Last Updated: 1 month ago)
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-233AA, TO-8-3 Lens Top Metal Can
Number of Pins 3
Transistor Element Material SILICON
Operating Temperature -65°C~200°C TJ
Packaging Bulk
Published 2002
Series Military, MIL-PRF-19500/207
JESD-609 Code e0
Pbfree Code no
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Terminal Finish Tin/Lead (Sn/Pb)
HTS Code 8541.29.00.95
Max Power Dissipation 1.75W
Terminal Position BOTTOM
Terminal Form WIRE
Pin Count 3
Reference Standard MIL-S-19500/180D
Qualification Status Qualified
Number of Elements 1
Configuration SINGLE
Case Connection COLLECTOR
Polarity/Channel Type NPN
Transistor Type NPN
Collector Emitter Voltage (VCEO) 55V
Max Collector Current 3A
DC Current Gain (hFE) (Min) @ Ic, Vce 35 @ 750mA 4V
Current - Collector Cutoff (Max) 15μA ICBO
Vce Saturation (Max) @ Ib, Ic 750mV @ 40mA, 750mA
Current - Collector (Ic) (Max) 3A
Transition Frequency 1.25MHz
Collector Base Voltage (VCBO) 100V
Radiation Hardening No
RoHS Status Non-RoHS Compliant
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $202.50000 $202.5
500 $200.475 $100237.5
1000 $198.45 $198450
1500 $196.425 $294637.5
2000 $194.4 $388800
2500 $192.375 $480937.5
JAN2N1486 Product Details

JAN2N1486 Overview


In this device, the DC current gain is 35 @ 750mA 4V, which is the ratio between the base current and the collector current.Vce saturation?means Ic is at its maximum value(saturated), and the vce saturation(Max) is 750mV @ 40mA, 750mA.In this part, there is a transition frequency of 1.25MHz.Single BJT transistor is possible for the collector current to fall as low as 3A volts at Single BJT transistors maximum.

JAN2N1486 Features


the DC current gain for this device is 35 @ 750mA 4V
the vce saturation(Max) is 750mV @ 40mA, 750mA
a transition frequency of 1.25MHz

JAN2N1486 Applications


There are a lot of Microsemi Corporation JAN2N1486 applications of single BJT transistors.

  • Inverter
  • Interface
  • Driver
  • Muting

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