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2SA1962OTU

2SA1962OTU

2SA1962OTU

ON Semiconductor

2SA1962OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website

SOT-23

2SA1962OTU Datasheet

non-compliant

In-Stock: 0 items
Specifications
Name Value
Type Parameter
Factory Lead Time 4 Weeks
Lifecycle Status ACTIVE (Last Updated: 2 days ago)
Contact Plating Tin
Mount Through Hole
Mounting Type Through Hole
Package / Case TO-3P-3, SC-65-3
Number of Pins 3
Weight 6.401g
Transistor Element Material SILICON
Operating Temperature -55°C~150°C TJ
Packaging Tube
Published 2005
JESD-609 Code e3
Pbfree Code yes
Part Status Active
Moisture Sensitivity Level (MSL) 1 (Unlimited)
Number of Terminations 3
ECCN Code EAR99
Subcategory Other Transistors
Max Power Dissipation 130W
Frequency 30MHz
Base Part Number 2SA1962
Number of Elements 1
Element Configuration Single
Power Dissipation 130W
Transistor Application AMPLIFIER
Gain Bandwidth Product 30MHz
Polarity/Channel Type PNP
Transistor Type PNP
Collector Emitter Voltage (VCEO) 250V
Max Collector Current 17A
DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 1A 5V
Current - Collector Cutoff (Max) 5μA ICBO
Vce Saturation (Max) @ Ib, Ic 3V @ 800mA, 8A
Collector Emitter Breakdown Voltage 250V
Transition Frequency 30MHz
Collector Base Voltage (VCBO) -250V
Emitter Base Voltage (VEBO) -5V
hFE Min 55
Radiation Hardening No
RoHS Status ROHS3 Compliant
Lead Free Lead Free
Pricing & Ordering
Quantity Unit Price Ext. Price
1 $3.11000 $3.11
10 $2.80100 $28.01
450 $2.13569 $961.0605
900 $1.87970 $1691.73
1,350 $1.57251 $1.57251
2SA1962OTU Product Details

2SA1962OTU Overview


This device has a DC current gain of 80 @ 1A 5V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.An emitter's base voltage can be kept at -5V to gain high efficiency.Parts of this part have transition frequencies of 30MHz.A maximum collector current of 17A volts is possible.

2SA1962OTU Features


the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
a transition frequency of 30MHz

2SA1962OTU Applications


There are a lot of ON Semiconductor 2SA1962OTU applications of single BJT transistors.

  • Inverter
  • Driver
  • Interface
  • Muting

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