2SA1962OTU Overview
This device has a DC current gain of 80 @ 1A 5V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.An emitter's base voltage can be kept at -5V to gain high efficiency.Parts of this part have transition frequencies of 30MHz.A maximum collector current of 17A volts is possible.
2SA1962OTU Features
the DC current gain for this device is 80 @ 1A 5V
the vce saturation(Max) is 3V @ 800mA, 8A
the emitter base voltage is kept at -5V
a transition frequency of 30MHz
2SA1962OTU Applications
There are a lot of ON Semiconductor 2SA1962OTU applications of single BJT transistors.
- Inverter
- Driver
- Interface
- Muting
