2SA1962OTU datasheet pdf and Transistors - Bipolar (BJT) - Single product details from ON Semiconductor stock available on our website
SOT-23
2SA1962OTU Datasheet
non-compliant
In-Stock: 0 items
Specifications
Name
Value
Type
Parameter
Factory Lead Time
4 Weeks
Lifecycle Status
ACTIVE (Last Updated: 2 days ago)
Contact Plating
Tin
Mount
Through Hole
Mounting Type
Through Hole
Package / Case
TO-3P-3, SC-65-3
Number of Pins
3
Weight
6.401g
Transistor Element Material
SILICON
Operating Temperature
-55°C~150°C TJ
Packaging
Tube
Published
2005
JESD-609 Code
e3
Pbfree Code
yes
Part Status
Active
Moisture Sensitivity Level (MSL)
1 (Unlimited)
Number of Terminations
3
ECCN Code
EAR99
Subcategory
Other Transistors
Max Power Dissipation
130W
Frequency
30MHz
Base Part Number
2SA1962
Number of Elements
1
Element Configuration
Single
Power Dissipation
130W
Transistor Application
AMPLIFIER
Gain Bandwidth Product
30MHz
Polarity/Channel Type
PNP
Transistor Type
PNP
Collector Emitter Voltage (VCEO)
250V
Max Collector Current
17A
DC Current Gain (hFE) (Min) @ Ic, Vce
80 @ 1A 5V
Current - Collector Cutoff (Max)
5μA ICBO
Vce Saturation (Max) @ Ib, Ic
3V @ 800mA, 8A
Collector Emitter Breakdown Voltage
250V
Transition Frequency
30MHz
Collector Base Voltage (VCBO)
-250V
Emitter Base Voltage (VEBO)
-5V
hFE Min
55
Radiation Hardening
No
RoHS Status
ROHS3 Compliant
Lead Free
Lead Free
Pricing & Ordering
Quantity
Unit Price
Ext. Price
1
$3.11000
$3.11
10
$2.80100
$28.01
450
$2.13569
$961.0605
900
$1.87970
$1691.73
1,350
$1.57251
$1.57251
2SA1962OTU Product Details
2SA1962OTU Overview
This device has a DC current gain of 80 @ 1A 5V, which is the ratio between the base current and the collector current.Saturation of VC means the Ic value is at its maximum, so vce saturation (Max) is 3V @ 800mA, 8A.An emitter's base voltage can be kept at -5V to gain high efficiency.Parts of this part have transition frequencies of 30MHz.A maximum collector current of 17A volts is possible.
2SA1962OTU Features
the DC current gain for this device is 80 @ 1A 5V the vce saturation(Max) is 3V @ 800mA, 8A the emitter base voltage is kept at -5V a transition frequency of 30MHz
2SA1962OTU Applications
There are a lot of ON Semiconductor 2SA1962OTU applications of single BJT transistors.